D 150mm for Power Semiconductor Devices Si Wafer

D 150mm for power semiconductor devices si wafer specification:Diameter150+/-0.3 mmGradePrimeGrowthCZType/DopantAnyOrientation(100) +/-0.5°Resistivityless than 0.005 Ohm-cmThickness675+/-25 µmSurface finishSingle Side Polished / SSPFlatNoneTTVless than 10 µmBowless than 40 µmWarpless than 40 µmPa

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D 150mm for power semiconductor devices si wafer 

specification:
Diameter150+/-0.3 mm
GradePrime
GrowthCZ
Type/DopantAny
Orientation(100) +/-0.5°
Resistivityless than 0.005 Ohm-cm
Thickness675+/-25 µm
Surface finishSingle Side Polished / SSP
FlatNone
TTVless than 10 µm
Bowless than 40 µm
Warpless than 40 µm
Particlesless than 20@0.3 µm
PackagingRegular Cassettes
 

According your require, we can produce customized silicon wafers, no matter what diameter,
thickness or type. We expect to service you.

 

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